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Review of Scientific Instruments / Volume 83 / Issue 2 / ARTICLES / Condensed Matter; Materials

Rev. Sci. Instrum. 83, 023903 (2012); http://dx.doi.org/10.1063/1.3683571 (5 pages)

Solid-state source of atomic oxygen for low-temperature oxidation processes: Application to pulsed laser deposition of TiO2:N films

Daiki Ojima, Tetsuya Chiba, Kazunari Shima, Hidenori Hiramatsu, Hideo Hosono, and Katsuro Hayashi

Materials and Structures Laboratory, Tokyo Institute of Technology, R3-34, Nagatsuta 4259, Yokohama 226-8503, Japan

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(Received 9 December 2011; accepted 22 January 2012; published online 13 February 2012)

An atomic oxygen (AO) source has been redesigned to coordinate with a pulsed laser deposition system and used to grow nitrogen-doped TiO2 films by deposition of TiN and simultaneous irradiation of the substrate with AO. The AO source uses an incandescently heated thin tube of zirconia as an oxygen permeation media to generate pure AO of low kinetic energy. The emission flux is calibrated using a silver-coated quartz crystal microbalance. The thin shape of the probe and transverse emission geometry of this emission device allow the emission area to be positioned close to the substrate surface, enhancing the irradiation flux at the substrate. AO irradiation is crucial for formation of TiO2 phases via oxidation of the deposited TiN laser plume, and is effective for decrease of the substrate temperature for crystallization of anatase phase to as low as around 200 °C.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. DESIGN AND EVALUATION OF THE EMISSION SOURCE
    1. Emission source
    2. Atomic oxygen flux
  3. IN SITU OXIDATION DURING PULSED LASER DEPOSITION
    1. Experimental
    2. Results and discussion
  4. CONCLUSIONS

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KEYWORDS, PACS, and IPC

Keywords

crystallisation, heat treatment, laser beam effects, nitrogen, oxidation, pulsed laser deposition, semiconductor growth, semiconductor materials, semiconductor thin films, titanium compounds, zirconium compounds

PACS

  • 81.15.Fg

    Pulsed laser ablation deposition

  • 68.55.ag

    Semiconductors

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 81.65.Mq

    Oxidation

  • 81.40.Gh

    Other heat and thermomechanical treatments

International Patent Classification (IPC)

  • C23C16/48

    By irradiation, e.g. photolysis, radiolysis, particle radiation

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

  • C21D1/00

    General methods or devices for heat treatment, e.g. annealing, hardening, quenching, tempering

  • B01D9/00

    Crystallisation

  • C22F1/00

    Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3683571

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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