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Rev. Sci. Instrum. 83, 023502 (2012); http://dx.doi.org/10.1063/1.3681778 (5 pages)

Measurement of ion and electron temperatures in plasma blobs by using an improved ion sensitive probe system and statistical analysis methods

K. Okazaki1, H. Tanaka1, N. Ohno1, N. Ezumi2, Y. Tsuji1, and S. Kajita3

1Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8603, Japan
2Nagano National College of Technology, Nagano 381-8550, Japan
3EcoTopia Science Institute, Nagoya University, Nagoya, Aichi 464-8603, Japan

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(Received 18 November 2011; accepted 13 January 2012; published online 7 February 2012)

We have measured ion temperature as well as electron temperature in plasma blobs observed in a linear plasma device by using an improved ion sensitive probe. Current–voltage characteristics of the ion sensitive probe inside and outside plasma blobs were re-constructed with a conditional sampling method. It is clearly found that both ion and electron temperatures in plasma blobs decrease more slowly in a cross-field direction than those in a bulk plasma without plasma blobs.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL SETUP
    1. Linear divertor plasma simulator NAGDIS-II
    2. Ion sensitive probe with an additional single probe
    3. Electric circuit for the measurement
  3. ANALYSIS PROCEDURE
  4. EXPERIMENTAL RESULT
    1. Fluctuation analysis
    2. Calculation of T i and T e
  5. SUMMARY

KEYWORDS and PACS

PACS

  • 52.70.Ds

    Electric and magnetic measurements

  • 52.75.-d

    Plasma devices

  • 52.25.Fi

    Transport properties

  • 02.50.-r

    Probability theory, stochastic processes, and statistics

ARTICLE DATA

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

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Figures (click on thumbnails to view enlargements)

FIG.1
Diagrammatic illustration of the linear plasma divertor simulator NAGDIS-II.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Structure of the new probe head composed of ISP and single LP and (b) behaviors of ions and electrons at the head of ISP.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Improved electric circuit for the measurement.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Outline of analysis procedure.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.5
Radial distributions of (a) electron density, ne, and floating potential, Vf, (dashed line) obtained by G-electrode, and (b) skewness and fluctuation level (dashed line) obtained from Isat.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.6
Power spectra of the Isat signal at r = 24 mm.

FIG.6 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.7
Normalized probability density function of I sat f at r = 24 mm. Vertical dashed lines represent the upper and the lower threshold.

FIG.7 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.8
Reconstructed IV characteristics (a) from Ip and (b) Ig.

FIG.8 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.9
(a) Radial distributions of Ti and (b) Te obtained from the reconstructed IV characteristics.

FIG.9 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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