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Rev. Sci. Instrum. 79, 103106 (2008); http://dx.doi.org/10.1063/1.2999919 (3 pages)

Rapid photoreflectance spectroscopy for strained silicon metrology

H. Chouaib1, M. E. Murtagh1, V. Guènebaut1, S. Ward1, P. V. Kelly1, M. Kennard2, Y. M. Le Vaillant2, M. G. Somekh3, M. C. Pitter3, and S. D. Sharples3

1Optical Metrology Innovations Ltd., 2200 Cork Airport Business Park, Cork Airport, Co. Cork, Ireland
2Soitec S.A., Parc Technologies des Fontaines, 38190 Bernin, France
3Department of Electronic Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, England

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(Received 7 August 2008; accepted 22 September 2008; published online 22 October 2008)

We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.

© 2008 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL RESULTS AND MODELS
  3. CONCLUSION

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KEYWORDS and PACS

PACS

  • 78.20.hb

    Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

  • 78.30.Am

    Elemental semiconductors and insulators

  • 71.20.Mq

    Elemental semiconductors

  • 77.65.-j

    Piezoelectricity and electromechanical effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

For access to fully linked references, you need to log in.
    Y. Saito, M. Motohashni, N. Hayazawa, M. Iyoki, and S. Kawata, Appl. Phys. Lett. 88, 143109 (2006)APPLAB000088000014143109000001.

    S. Richard, F. Aniel, G. Fishman, and N. Cavassilas, J. Appl. Phys. 94, 1795 (2003)JAPIAU000094000003001795000001.


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