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Review of Scientific Instruments / Volume 79 / Issue 10 / OPTICS; ATOMS AND MOLECULES; SPECTROSCOPY; PHOTON DETECTORS

Rev. Sci. Instrum. 79, 103103 (2008); http://dx.doi.org/10.1063/1.2999827 (5 pages)

300 mm reference wafer fabrication by using direct laser lithography

Hyug-Gyo Rhee, Dongik Kim, Seung-Ki Hong, and Yun-Woo Lee

Space Optics Research Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea

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(Received 28 July 2008; accepted 19 September 2008; published online 17 October 2008)

We propose a new method based on direct laser lithography to fabricate reference chromium patterns on a silicon wafer. Our method is able to fabricate a maximum 360-mm-diameter pattern with 651-nm-position uncertainty. The minimum pattern size is about 0.8 μm (linewidth value) and the maximum available height of the pattern is slightly over 400 nm.

© 2008 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. SYSTEM CONFIGURATION
  3. PATTERNING RESULTS
  4. CONCLUSION

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KEYWORDS and PACS

Keywords

elemental semiconductors, lithography, silicon

PACS

  • 85.40.Hp

    Lithography, masks and pattern transfer

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2999827

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. I. Kim, H. G. Rhee, J. B. Song, and Y. W. Lee, Rev. Sci. Instrum. 78, 103110 (2007)RSINAK000078000010103110000001.


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