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Review of Scientific Instruments / Volume 78 / Issue 6 / INVITED ARTICLE

Rev. Sci. Instrum. 78, 061301 (2007); http://dx.doi.org/10.1063/1.2738946 (9 pages)

Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy

Thomas Beechem1, Samuel Graham1, Sean P. Kearney2, Leslie M. Phinney2, and Justin R. Serrano2

1Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405
2Engineering Sciences Center, Sandia National Laboratories, Albuquerque, New Mexico 87185-0834

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(Received 15 November 2006; accepted 1 April 2007; published online 11 June 2007)

Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of ±40 MPa for an average applied stress of −325 MPa and temperature of 520 °C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement.

© 2007 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THEORY
    1. The Raman effect
    2. Temperature dependence of the Raman signal
    3. Stress dependence of the Raman signal
    4. Determination of stress and temperature
  3. EXPERIMENT
    1. Sample preparation
    2. Raman measurement system
  4. RESULTS AND DISCUSSION
    1. Temperature measurements
    2. Uncertainty in the calculation of stress
    3. Determination of stress from mapping procedure
    4. Comparison of mapping results to finite-element analysis

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KEYWORDS and PACS

Keywords

micromechanical devices, Raman spectra, finite element analysis

PACS

  • 07.10.Cm

    Micromechanical devices and systems

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2738946

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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