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Review of Scientific Instruments / Volume 78 / Issue 2 / CONDENSED MATTER; MATERIALS

Rev. Sci. Instrum. 78, 023905 (2007); http://dx.doi.org/10.1063/1.2472601 (5 pages)

Online system for temperature and accumulated dose control in plasma-based ion implantation

F. Roy1, G. Abel1, B. Terreault1, A. Reguer1, J.-L. Meunier2, M. Bolduc1, and G. G. Ross1

1INRS-Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
2Department of Chemical Engineering, McGill University, 3610 University Street, Montréal, Québec H3A 2B2, Canada

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(Received 30 October 2006; accepted 14 January 2007; published online 16 February 2007)

Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.

© 2007 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL SETUP
  3. POWER AND ION FLUENCE MODEL
  4. RESULTS
  5. DISCUSSION
  6. SUMMARY

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KEYWORDS and PACS

Keywords

ion implantation, plasma materials processing, surface treatment, Rutherford backscattering

PACS

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 81.65.-b

    Surface treatments

  • 68.49.Sf

    Ion scattering from surfaces (charge transfer, sputtering, SIMS)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2472601

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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