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Review of Scientific Instruments / Volume 77 / Issue 11 / REVIEW ARTICLE

Rev. Sci. Instrum. 77, 111101 (2006); doi:10.1063/1.2354571 (12 pages)

Concepts and designs of ion implantation equipment for semiconductor processing

Peter H. Rose1 and Geoffrey Ryding2

1Epion Corporation, 37 Manning Road, Billerica, Massachusetts 01821
2Applied Materials, Inc., 66 Cherry Hill Drive, Beverly, Massachusetts 01915

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(Received 21 April 2006; accepted 22 August 2006; published online 10 November 2006)

Manufacturing ion implantation equipment for doping semiconductors has grown into a two billion dollar business. The accelerators developed for nuclear physics research and isotope separation provided the technology from which ion implanters have been developed but the unique requirements of the semiconductor industry defined the evolution of the architecture of these small accelerators. Key elements will be described including ion generation and beam transport systems as well as the techniques used to achieve uniform doping over large wafers. The wafers are processed one at a time or in batches and are moved in and out of the vacuum by automated handling systems. The productivity of an implanter is of economic importance and there is continuing need to increase the usable beam current especially at low energies.

© 2006 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. THE EVOLUTION OF THE ION IMPLANTER
    1. General concepts of an early production ion implanter
    2. The rapid changes required by the semiconductor industry
  3. CONCEPTUAL STRUCTURE OF THE ION IMPLANTER
    1. Ion sources
    2. Beam transport and analysis
    3. Methods for obtaining a uniform implant over a wafer
      1. Beam scan in two dimensions over a stationary wafer
      2. Hybrid scan combining a beam scan and a one axis mechanical wafer scan
      3. Hybrid scan combining a uniform ribbon beam and a one axis mechanical wafer scan
      4. 2D mechanical wafer scan
    4. Wafer cooling
  4. MEDIUM CURRENT IMPLANTERS
    1. High current implanters
    2. High energy implanters
    3. Specialized implanters
  5. NEW TECHNOLOGIES
    1. Plasma immersion
    2. Implantation by large molecular ions
    3. Gas clusters

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KEYWORDS and PACS

Keywords

design, ion implantation, semiconductor device manufacture, semiconductor technology, production equipment, semiconductor doping

PACS

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2354571

PUBLICATION DATA

ISSN:

0034-6748 (print)  
1089-7623 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. M. Poate and L. Rubin, Ind. Phys. 9, 12 (2003).

    R. Bernas and A. O. Nier, Rev. Sci. Instrum. 19, 895 (1947)RSINAK000019000012000895000001.

    T. Horsky, Rev. Sci. Instrum. 69, 840 (1998)RSINAK000069000002000840000001.


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