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Review of Scientific Instruments / Volume 76 / Issue 4 / GENERAL INSTRUMENTS

Rev. Sci. Instrum. 76, 045107 (2005); http://dx.doi.org/10.1063/1.1878213 (8 pages)

Development and performance of the nanoworkbench: A four tip STM for conductivity measurements down to submicrometer scales

Olivier Guise1, Hubertus Marbach1, John T. Yates1, Moon-Chul Jung2, Jeremy Levy3, and Joachim Ahner4

1Department of Chemistry, Surface Science Center, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
2Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
3Center for Oxide Semiconductor Materials for Quantum Computation, Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
4Seagate Technology, Pittsburgh, Pennsylvania 15222

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(Received 29 October 2004; accepted 24 January 2005; published online 23 March 2005)

A multiple-tip ultrahigh vacuum (UHV) scanning tunneling microscope (MTSTM) with a scanning electron microscope (SEM) for imaging and molecular-beam epitaxy growth capabilities has been developed. This instrument (nanoworkbench) is used to perform four-point probe conductivity measurements at μm spatial dimension. The system is composed of four chambers, the multiple-tip STM∕SEM chamber, a surface analysis and preparation chamber, a molecular-beam epitaxy chamber, and a load–lock chamber for fast transfer of samples and probes. The four chambers are interconnected by a unique transfer system based on a sample box with integrated heating and temperature-measuring capabilities. We demonstrate the operation and the performance of the nanoworkbench with STM imaging on graphite and with four-point-probe conductivity measurements on a silicon-on-insulator (SOI) crystal. The creation of a local FET, whose dimension and localization are, respectively, determined by the spacing between the probes and their position on the SOI surface, is demonstrated.

© 2005 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. OVERVIEW OF THE SYSTEM
  3. TRANSFER SYSTEM AND SAMPLE BOX
    1. Sample box and receiving stages
    2. Transfer system
  4. MULTIPLE-TIP STM∕SEM CHAMBER
    1. Overview: nanomanipulators and XYZ table
    2. UHV‐SEM+MCP detection
    3. Docking stage
    4. Vibration isolation
  5. PERFORMANCE
    1. STM
      1. Sample preparation
      2. STM operation and STM imaging
    2. Four-point probe
      1. Setup and strategy
      2. Sample preparation
      3. Results

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KEYWORDS and PACS

Keywords

scanning tunnelling microscopy, scanning electron microscopes, electrical conductivity measurement, graphite, silicon-on-insulator, micromechanical devices, nanotechnology, electron probes

PACS

  • 07.79.Cz

    Scanning tunneling microscopes

  • 07.78.+s

    Electron, positron, and ion microscopes; electron diffractometers

  • 07.10.Cm

    Micromechanical devices and systems

  • 84.37.+q

    Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1878213

PUBLICATION DATA

ISSN

0034-6748 (print)  
1089-7623 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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