The design and performance of a four-axis low-profile eucentric UHV goniometer for in situ reflection high-energy electron diffraction (RHEED) studies during film deposition is reported. The design provides one translational and three rotational degrees of freedom that are fully independent. Although developed to facilitate high-pressure RHEED during the growth of oxide thin films by pulsed laser deposition, this goniometer design is applicable to other UHV techniques including molecular beam epitaxy. The goniometer requires only a single DN 100 CF flange (6 in. o.d., 100 mm i.d.), making it suitable for small deposition systems, too. Samples, attached to a resistively heated holder, can be easily transferred on and off of the goniometer without breaking vacuum. The holder accommodates samples up to 10 mm×10 mm in size and allows them to be heated to 900 °C in pure oxygen while being attached to the goniometer. Full eucentric motion of the hot sample is possible with a typical axis precision of <0.1°. Most of the mechanism is located in air, allowing the use of standard materials and lubricants, substantially reducing the in-vacuum mechanics, and increasing the precision, reliability, and robustness of the system.