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Feb 2002

Volume 73, Issue 2, pp. 241-1098

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Use of ion sources for nonsemiconductor surface modification (plenary)

Masaya Iwaki

Rev. Sci. Instrum. 73, 863 (2002); http://dx.doi.org/10.1063/1.1431709 (5 pages) | Cited 3 times

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At RIKEN, studies have been made on surface modification of metals, ceramics, and polymers using ion implantation in order to improve surface properties of various materials. For fundamental studies of surface modification, about 60 kinds of ions have been used as implanted elements, using rf-type, Nielsen-type, and hollow cathode-type ion sources. The Nielsen-type ion source has been the most useful for obtaining various ion species by modification to the evaporation oven and by selection of the source material. High current beams of some kinds of ions were obtained using Freeman-type or microwave-type ion sources. Ion beam modification with nonmass analyzed ions was investigated for practicable use of ion implantation. In this article, these ion sources are described, and their utilization in a variety of applications is reviewed. The improvement of the lifetime of tools by nitrogen implantation is introduced as a topic in the fields of nonsemiconductor materials, and several points for expansion of the field are emphasized. As a successful example in Japan, the dynamic mixing used in industry is introduced and ion sources are shown to be one of the technologically important factors. Plasma based ion implantation is compared with traditional surface finishing. Finally, the fabrication of small vascular grafts controlling cell adhesion is introduced as the applications of ion beams to biomedical materials. © 2002 American Institute of Physics.
Show PACS
81.65.Ps Polishing, grinding, surface finishing
68.35.Fx Diffusion; interface formation
61.80.Jh Ion radiation effects
61.72.up Other materials
52.77.Dq Plasma-based ion implantation and deposition

Ion beam technologies in the semiconductor world (plenary)

J. M. Poate and K. Saadatmand

Rev. Sci. Instrum. 73, 868 (2002); http://dx.doi.org/10.1063/1.1428782 (5 pages) | Cited 2 times

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Ion beam technologies, in particular ion implantation, have had a profound effect on the development of Si integrated circuits. We review the pertinent history of ion source and machine development within the constraints of Moore’s law. For ion sources, the critical roles of hot cathode and rf sources are discussed. Novel applications such as sources for finely focused beams for lithography and cluster beams for doping (decaborane) or smoothing (Ar) will be discussed. Future trends in terms of the next generation of devices and the required implantation machines will be reviewed. © 2002 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
61.72.uf Ge and Si
01.30.Rr Surveys and tutorial papers; resource letters

Characteristics of an ion beam modification system with a linear ion source

Ari Ide-Ektessabi, Nobuto Yasui, and Daisuke Okuyama

Rev. Sci. Instrum. 73, 873 (2002); http://dx.doi.org/10.1063/1.1430877 (4 pages) | Cited 2 times

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Characteristics of an ion beam surface modification system with a linear ion source are described in this article. The linear ion source is principally based on an anode layer thruster, which is generally referred to as “closed drift thruster.” The linear ion source has a slit type racetrack-shape extraction geometry. The spatial current distribution of the extracted ion beam has, therefore, a racetrack shape. Experiments were carried out for the discharge voltages ranging from 500 to 1500 V and ion doses ranging from 7.3×1013 to 8.2×1014 ions/cm2, using three kinds of ion species, namely, oxygen, nitrogen, and argon. Ion beam current density was uniform in the direction of the straight part of the extraction slit. Metalization of the surface modified polymers was also performed. To study the improvement of the adhesion of the metal films to the polymers, the peel-off tests were carried out on ion-irradiated polyimide-copper films. The results indicated that adhesion strength between polyimide and copper was improved as a result of the surface modification by the linear ion source. © 2002 American Institute of Physics.
Show PACS
81.65.Ps Polishing, grinding, surface finishing
82.35.Gh Polymers on surfaces; adhesion
61.82.Pv Polymers, organic compounds
61.80.Jh Ion radiation effects
07.77.Ka Charged-particle beam sources and detectors
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