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Dec 2002

Volume 73, Issue 12, pp. 4057-4404

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back to top CONDENSED MATTER; MATERIALS

High-resolution scattering apparatus for surface studies

L. Pedemonte, A. Gussoni, R. Tatarek, and G. Bracco

Rev. Sci. Instrum. 73, 4257 (2002); http://dx.doi.org/10.1063/1.1517147 (7 pages) | Cited 7 times

Online Publication Date: 21 November 2002

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A high-resolution apparatus designed to study the structural and dynamical surface properties is described. The apparatus combines the thermal energy He atom- and the low energy ion-scattering techniques both with time-of-flight detection of the scattered fraction. The energy spread of the supersonic He beam is less than 100 μeV at source temperatures below 35 K. The source temperature can be varied between 22 and 300 K to perform elastic, inelastic, and quasielastic scattering studies over a broad range of incident energies. The scattered beam is detected by a homemade quadrupole mass spectrometer designed to have high efficiency for He. The ion source works between 2 and 5 keV and the ion beam is mass selected by a Wien filter which also separates the transmitted ions from fast neutral species. The beam is detected at a scattering angle of 160° and therefore neutral impact collision ion scattering spectroscopy studies can be performed. The base pressure in the target chamber is in the 10−11 mbar range. The capabilities of the apparatus are tested, and the evolution of surface disorder on Ag(110) up to 800 K is characterized.© 2002 American Institute of Physics.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
68.49.Bc Atom scattering from surfaces (diffraction and energy transfer)

Surface domain imaging in external magnetic fields

G. Steierl, G. Liu, D. Iorgov, and J. Kirschner

Rev. Sci. Instrum. 73, 4264 (2002); http://dx.doi.org/10.1063/1.1520729 (6 pages) | Cited 2 times

Online Publication Date: 21 November 2002

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We report on experimental advances in scanning electron microscopy with polarization analysis that allow the observation of ferromagnetic domains in external magnetic fields of about 0.1 T. This is achieved by using a modified electron optics that produces a magnetic field at the sample surface that is spatially confined on the length scale of 0.1 mm. During imaging, primary and secondary electrons pass through the magnetic field without significant disturbance. We demonstrate that the primary electron beam may be used to keep track of the generated magnetic field. As an exemplary application, the switching processes of rectangular Permalloy elements are analyzed. © 2002 American Institute of Physics.
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75.70.Rf Surface magnetism
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
75.60.Ch Domain walls and domain structure

A uniaxial tensile stress apparatus for temperature-dependent magnetotransport and optical studies of thin films

A. C. H. Rowe, K. Fasanella, D. R. Hines, T. Zhou, and S. A. Solin

Rev. Sci. Instrum. 73, 4270 (2002); http://dx.doi.org/10.1063/1.1516852 (7 pages) | Cited 4 times

Online Publication Date: 21 November 2002

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A mechanical apparatus for the application of variable uniaxial tensile stress to thin films grown on bulk material has been designed for use in measuring the electrical and/or optical properties of a thin layer over a temperature range 4.2 K<T<300 K, and in magnetic fields up to 7 T. The induced strain is measured with a resolution of 0.0015% by monitoring the position of a laser beam reflected off the surface of the strained sample. The use of the apparatus is demonstrated on n-type InSb layers grown on GaAs where the uniaxial tensile stress is applied in the [001] direction. At 300 K and strains of up to 0.05%, an increase in the conductivity of approximately 3.5% is observed, most of which (∼2.5%) is the result of an increase in the carrier concentration. The remaining 1% is due to an increase in the carrier mobility. Using band-structure k⋅p theory and the deformation potential parameters obtained from optical spectroscopy measurements under uniaxial compression, these observations are shown to be well described by a reduction in both the fundamental band gap and the carrier effective mass with increasing tensile strain. © 2002 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
07.10.Pz Instruments for strain, force, and torque
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
71.20.Nr Semiconductor compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Instrumentation for plasma immersion ion implantation

R. López-Callejas, R. Valencia-Alvarado, A. E. Muñoz-Castro, O. G. Godoy-Cabrera, and J. L. Tapia-Fabela

Rev. Sci. Instrum. 73, 4277 (2002); http://dx.doi.org/10.1063/1.1517144 (6 pages) | Cited 4 times

Online Publication Date: 21 November 2002

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Plasma immersion ion implantation (PIII) has proved to be a good method to implant ions into materials in order to modify their surface properties. In this article, we describe the design and construction of a small and low cost PIII device. The instrumentation consists of: (i) a simple plasma immersion experimental setup for ion implantation based on direct current glow discharges, (ii) a 25 kV pulse generator, (iii) an electrical probe system endowed with a guard to carry out diagnostics of the plasma parameters, and (iv) an automatic spectroscopy system for determining the plasma temperature. A study of the sheath expansion has been considered in order to fulfill the requirements of electron temperature, plasma density, high voltage bias, pulse frequency, and pulse duration for an adequate PIII process. © 2002 American Institute of Physics.
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52.77.Dq Plasma-based ion implantation and deposition
81.65.-b Surface treatments
61.72.up Other materials
52.80.Hc Glow; corona

Design and capabilities of a cluster implantation and deposition apparatus: First results on hillock formation under energetic cluster ion bombardment

V. N. Popok, S. V. Prasalovich, M. Samuelsson, and E. E. B. Campbell

Rev. Sci. Instrum. 73, 4283 (2002); http://dx.doi.org/10.1063/1.1518790 (5 pages) | Cited 13 times

Online Publication Date: 21 November 2002

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A description, advantages, and capabilities of a cluster implantation and deposition apparatus supplied by a pulsed cluster source from gaseous precursors are presented. A number of possible in situ and ex situ experimental methods to study cluster–surface collisions and modified substrate surfaces are discussed. Test experiments on cluster production show formation of Ar, N2, and O2 clusters with size up to 150 atoms for Ar and 60–70 molecules for the other gases. The possibility of cluster mass selection and acceleration up to 25 keV is reported. Nanosize hillock formation was found as a result of cluster–surface collisions with pyrolytic graphite and indium–tin–oxide. It is suggested that the hillocks’ parameters such as size and density per surface area can be controlled by varying the implantation parameters and substrate material and thus provide a promising technique for nanoscale surface modification. © 2002 American Institute of Physics.
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68.49.-h Surface characterization by particle-surface scattering
61.72.up Other materials
81.15.Jj Ion and electron beam-assisted deposition; ion plating
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)

Generation of 600 T by electromagnetic flux compression with improved implosion symmetry

Y. H. Matsuda, F. Herlach, S. Ikeda, and N. Miura

Rev. Sci. Instrum. 73, 4288 (2002); http://dx.doi.org/10.1063/1.1520733 (7 pages) | Cited 14 times

Online Publication Date: 21 November 2002

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We have developed a device for generating ultrahigh magnetic fields by means of electromagnetic flux compression. The device that we call “feed gap compensator” is a flux concentrator that consists of a thick-walled copper cylinder with a number of thin radial slits. This is inserted between the primary coil and the liner; it has resulted in a substantial improvement of the implosion symmetry that is normally disturbed by the feed gap of the primary coil. A maximum field exceeding 600 T can be generated reproducibly by using this device. Because of the improved symmetry of the liner motion, we observed turnaround phenomena not only in the wave form of the magnetic field but also in the photographs of the liner that are taken by a high-speed image converter camera. The final implosion speed and the turnaround radius have been determined by calculating the magnetic flux from a combination of framing camera data and the measured field. It is confirmed that the turnaround field is a function of the implosion speed; this function is given by the particle speed of the shock wave associated with the pressure pulse induced by the magnetic field. Further optimization of the flux compression system is discussed with a view to obtaining higher fields that are suitable for application in experiments. © 2002 American Institute of Physics.
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07.55.Db Generation of magnetic fields; magnets

A time-of-flight resonance ionization mass spectrometer for elemental analysis of precious metals in minerals

S. S. Dimov, S. L. Chryssoulis, and R. H. Lipson

Rev. Sci. Instrum. 73, 4295 (2002); http://dx.doi.org/10.1063/1.1518146 (12 pages) | Cited 2 times

Online Publication Date: 21 November 2002

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An instrument for time-of-flight resonance ionization mass spectrometry (TOF-RIMS) developed at the Advanced Mineral Technology Laboratory (Ontario, Canada) is described which has been applied to the quantitative trace analysis of metals in minerals. The instrument incorporates new pulsed ion optics which provide fast switching of polarity and potentials of acceleration and ion lens optics between the two consecutive laser ablation and laser photoionization steps. Pulsed mode operation allows the time-of-flight mass spectrometer to be operated at higher laser ablation powers with more efficient suppression of the primary ions which are a source of noise that degrades the ultimate sensitivity of detection. The performance of the TOF-RIMS apparatus was assessed by analyzing trace amounts of gold (Au) in sulphide, iron oxide, and silicate mineral samples. Quantification of the TOF-RIMS measurements was established on the basis of calibration curves obtained using reference samples covering three orders of magnitude in concentration. Reproducible minimum detection limits (2σ) of ⩽10 parts per billion with a precision of ∼±15% were obtained. © 2002 American Institute of Physics.
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82.80.Rt Time of flight mass spectrometry
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.75.+h Mass spectrometers

Ultraviolet phase-modulated ellipsometer

Enric Garcia-Caurel, Jean Luc Moncel, Francis Bos, and Bernard Drévillon

Rev. Sci. Instrum. 73, 4307 (2002); http://dx.doi.org/10.1063/1.1518788 (6 pages)

Online Publication Date: 21 November 2002

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A phase modulated ellipsometer working in the spectral range from the visible (1.5 eV) to the far ultraviolet (9.5 eV) is described and some preliminary examples of applications are shown in order to illustrate its sensitivity and accuracy. The optical configuration of the ellipsometer consists of a light source, a monochromator, a polarizer, a photoelastic modulator, a sample holder, an analyzer, and two detectors. This system has been adapted into air sealed chambers and functions under vacuum conditions to prevent absorption of the far ultraviolet radiation by atmospheric gases. The described apparatus makes it possible to perform both ex situ and in situ real time measurements. Working in the far ultraviolet (FUV) (6–10 eV), opens the interesting possibility of determining the optical properties of materials at photon energies of 6.5 and 9.5 eV, which correspond to the laser sources used in the photolithographic process. It can be anticipated that FUV phase modulated ellipsometry will appear as a useful tool for material research and characterization in the semiconductor industry. © 2002 American Institute of Physics.
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07.60.Fs Polarimeters and ellipsometers
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