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Feb 2000

Volume 71, Issue 2, pp. 335-1239

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Microwave ion sources for industrial applications (invited)

N. Sakudo

Rev. Sci. Instrum. 71, 1016 (2000); http://dx.doi.org/10.1063/1.1150376 (7 pages) | Cited 6 times

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Microwave ion sources for industrial use are usually driven by 2.45 GHz microwaves and operated in a very wide range of magnetic field from zero to over the electron cyclotron resonance magnetic field. They are used mostly under off-resonant conditions. For ion implantation into usual semiconductor devices, the weak points of the microwave ion source against the conventional implanter sources, the Freeman and the Bernas, had been the lower B+ ion current and the slightly narrower dynamic range of the current. However, the optimization of the discharge-chamber shape and volume resolved the problems. Consequently, the microwave sources exceed the conventional sources in most principal performances for implantation into semiconductor devices. For the sophisticated separation by implanted oxygen devices, the microwave ion source is very suitable for stable production of high-current O+ ion beams. 100 mA class O+ ion implanters dedicated to silicon on insulator technology were developed. On the other hand, for application to surface modification of materials, mass separation is completely eliminated in some cases. Recently, a new ion source for the purpose was developed, in which 2.45 GHz microwaves are absorbed by 13.56 MHz inductively coupled plasma without static magnetic field. The alternate magnetic field induced by 13.56 MHz rf power is considered to help microwaves penetrate into the plasma. Since the volume of the source is not restricted by solenoids as a usual microwave source, it can be applied to three dimensional implantation or plasma source ion implantation. © 2000 American Institute of Physics.
Show PACS
29.25.Ni Ion sources: positive and negative
07.77.Ka Charged-particle beam sources and detectors
85.40.Ry Impurity doping, diffusion and ion implantation technology

Ion sources for large area processing (invited)

M. Naito, Y. Ando, Y. Inouchi, H. Tanaka, and N. Miyamoto

Rev. Sci. Instrum. 71, 1023 (2000); http://dx.doi.org/10.1063/1.1150377 (6 pages) | Cited 2 times

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Large area ion sources have been used in ion doping systems in the field of LCD production. In these ion sources good uniformity and wide dynamic range in beam current are both required to achieve the good dose uniformity in wide dose range. A new ion source which uses dc arc discharge with three filaments, each of which is controlled individually, is now in the production lines instead of the conventional rf discharge type. Better than 5% of beam uniformity across 600 mm is achieved by an automated feedback control using beam profile data taken by a built-in beam profiler in less than 10 s from arc ignition. Another emerging requirement is high beam purity, for the ion beams from these ion sources are used without mass analysis. The hydrogen ion fraction was successfully reduced by magnetically retarding the hydrogen ions to less than 5%. A large area ion source having a newly designed mass separating structure is developed. The structure is comprised of a permanent magnet array and a beamlet scanner just after the multiple-slot beam extraction electrode system. All the unwanted ion species in the beam can be eliminated to a good level. © 2000 American Institute of Physics.
Show PACS
29.25.Ni Ion sources: positive and negative
07.77.Ka Charged-particle beam sources and detectors

Radio frequency linear ion beam source with 6 cm×66 cm beam

D. Siegfried, B. Buchholtz, D. Burtner, and W. Foster

Rev. Sci. Instrum. 71, 1029 (2000); http://dx.doi.org/10.1063/1.1150378 (3 pages) | Cited 2 times

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An inductively coupled radio frequency (rf) linear ion beam source with a 6×66 cm rectangular cross-section beam has been developed and tested. This source was designed to provide filamentless, low maintenance operation, and large area coverage for materials processing applications, typically involving translation of substrates across the narrow beam dimension. The source has been operated on argon, oxygen, and argon/oxygen mixtures at beam energies from 100–1500 eV. Beam currents up to 1.0 A have been obtained with argon at a rf discharge power of approximately 1 kW. Longitudinal beam current uniformity of better than ±10% has been obtained over a 50 cm length at a distance 25 cm from the ion source over a wide range of operating conditions. Source operating characteristics and performance data are presented including lateral and longitudinal beam current density profiles. © 2000 American Institute of Physics.
Show PACS
29.25.Ni Ion sources: positive and negative
07.77.Ka Charged-particle beam sources and detectors
41.85.Ew Particle beam profile, beam intensity
41.75.Ak Positive-ion beams
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