A ultra-high-vacuum wafer-fusion bonding system
Kyle McKay, Scott Wolter, and Jungsang Kim
Design elements and results are presented here for a UHV wafer-fusion-bonding system that is used to integrate material pairs that cannot be grown epitaxially. Manipulation of the interface dipoles are used to control the energy of the band alignment. Initial results are presented for the fusion-bonded InGaAs/Si heterojunction.